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BAS101_BAS101S 数据表(PDF) 6 Page - NXP Semiconductors |
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BAS101_BAS101S 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 11 page BAS101_BAS101S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 14 December 2009 6 of 11 NXP Semiconductors BAS101; BAS101S High-voltage switching diodes 8. Test information 9. Package outline 10. Packing information [1] For further information and the availability of packing methods, see Section 15. (1) IR =3mA Fig 5. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 Fig 6. Package outline SOT23 (TO-236AB) 04-11-04 Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAS101 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAS101S |
类似零件编号 - BAS101_BAS101S_15 |
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类似说明 - BAS101_BAS101S_15 |
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