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BAS101_BAS101S 数据表(PDF) 4 Page - NXP Semiconductors |
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BAS101_BAS101S 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BAS101_BAS101S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 14 December 2009 4 of 11 NXP Semiconductors BAS101; BAS101S High-voltage switching diodes 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. [2] When switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR =3mA. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage IF =100 mA [1] -- 1.1 V IR reverse current VR = 250 V - - 150 nA VR =250 V; Tj =150 °C - - 100 μA Cd diode capacitance VR =0V; f=1MHz - - 2 pF trr reverse recovery time [2] - - 50 ns |
类似零件编号 - BAS101_BAS101S_15 |
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类似说明 - BAS101_BAS101S_15 |
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