BA591_15_15 datasheet(4/8 Pages) PHILIPS

4 / 8 page

2004 Feb 17

4

NXP Semiconductors

Product specification

Band-switching diode

BA591

GRAPHICAL DATA

Fig.2

Diode capacitance as a function of reverse

voltage; typical values.

Tj =25 C; f = 1 MHz.

handbook, halfpage

010

20

VR (V)

Cd

(pF)

30

1.6

1.2

0.4

0

0.8

MGL477

Fig.3

Diode forward resistance as a function of

forward current; typical values.

Tj =25 C; f = 100 MHz.

handbook, halfpage

10

1

10−1

MGL476

10−1

110

IF (mA)

rD

(

Ω)

102

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