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2SD1805F-E 数据表(PDF) 2 Page - ON Semiconductor |
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2SD1805F-E 数据表(HTML) 2 Page - ON Semiconductor |
2 / 9 page 2SD1805 No.2115-2/9 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=50V, IE=0A 100 nA Emitter Cutoff Current IEBO VEB=5V, IC=0A 100 nA DC Current Gain hFE1VCE=2V, IC=500mA 120* 560* hFE2VCE=2V, IC=3A 95 Gain-Bandwidth Product fT VCE=10V, IC=50mA 120 MHz Output Capacitance Cob VCB=10V, f=1MHz 45 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=3A, IB=60mA 220 500 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=3A, IB=60mA 1.5 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 20 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V Turn-On Time ton See specified Test Circuit 30 ns Storage Time tstg 300 ns Fall Time tf 40 ns * : The 2SD1805 is classified by 500mA hFE as follows. Rank E F G hFE 120 to 200 160 to 320 280 to 560 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SD1805F-E TP 500pcs./bag Pb Free 2SD1805G-E TP 500pcs./bag 2SD1805F-TL-E TP-FA 700pcs./reel 2SD1805G-TL-E TP-FA 700pcs./reel VR RB + + INPUT OUTPUT RL 100μF 470μF PW=20μs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2=2A, VCC=10V VCC VBE |
类似零件编号 - 2SD1805F-E |
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类似说明 - 2SD1805F-E |
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