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2N3055AG 数据表(PDF) 5 Page - ON Semiconductor |
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2N3055AG 数据表(HTML) 5 Page - ON Semiconductor |
5 / 6 page 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) http://onsemi.com 5 COLLECTOR CUT−OFF REGION 10,000 +0.2 Figure 10. 2N3055A, MJ15015 VBE, BASE-EMITTER VOLTAGE (VOLTS) 1000 100 10 1.0 0.1 0.01 +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 VCE = 30 V TJ = 150°C 100 °C 25 °C REVERSE FORWARD IC = ICES NPN 1000 -0.2 Figure 11. MJ15016 VBE, BASE-EMITTER VOLTAGE (VOLTS) 100 10 1.0 0.1 0.01 0.001 -0.1 0 +0.1 +0.2 +0.3 VCE = 30 V TJ = 150°C 100 °C 25 °C REVERSE FORWARD IC = ICES PNP +0.4 +0.5 20 Figure 12. Forward Bias Safe Operating Area 2N3055A VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5 1 10 20 100 60 2 dc 30 ms 1 ms 100 ms 100 ms 20 Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 0.2 15 20 100 60 2.0 dc 0.1ms 100ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 1.0 0.5 30 120 1.0ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 12 and 13 is based on TC = 25 _C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. ORDERING INFORMATION Device Package Shipping 2N3055AG TO−204 (Pb−Free) 100 Units / Tray MJ15015G TO−204 (Pb−Free) 100 Units / Tray MJ15016G TO−204 (Pb−Free) 100 Units / Tray |
类似零件编号 - 2N3055AG |
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类似说明 - 2N3055AG |
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