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IRF8010PBF 数据表(PDF) 1 Page - International Rectifier |
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IRF8010PBF 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page Notes through are on page 8 www.irf.com 1 07/06/04 IRF8010PbF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 100V 15m Ω 80A PD - 95505 TO-220AB Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw N•m (lbf•in) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.57 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 -55 to + 175 300 (1.6mm from case ) 1.1(10) Max. 80 h 57 320 260 1.8 ± 20 16 |
类似零件编号 - IRF8010PBF_15 |
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类似说明 - IRF8010PBF_15 |
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