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IRF7606PBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRF7606PBF
功能描述  Generation V Technology
Download  7 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7606PBF 数据表(HTML) 1 Page - International Rectifier

  IRF7606PBF_15 Datasheet HTML 1Page - International Rectifier IRF7606PBF_15 Datasheet HTML 2Page - International Rectifier IRF7606PBF_15 Datasheet HTML 3Page - International Rectifier IRF7606PBF_15 Datasheet HTML 4Page - International Rectifier IRF7606PBF_15 Datasheet HTML 5Page - International Rectifier IRF7606PBF_15 Datasheet HTML 6Page - International Rectifier IRF7606PBF_15 Datasheet HTML 7Page - International Rectifier  
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HEXFET® Power MOSFET
5/13/04
IRF7606PbF
Absolute Maximum Ratings
www.irf.com
1
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
70
°C/W
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
VDSS = -30V
RDS(on) = 0.09Ω
Description
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
Parameter
Max.
Units
VDS
Drain-Source Voltage
-30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-2.9
A
IDM
Pulsed Drain Current

-29
PD @TA = 25°C
Maximum Power Dissipation
„
1.8
W
PD @TA = 70°C
Maximum Power Dissipation
„
1.1
W
Linear Derating Factor
14
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10µS
30
V
dv/dt
Peak Diode Recovery dv/dt
‚
-5.0
V/ns
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
240 (1.6mm from case)
PD - 95245


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