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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IRF7526D1PBF 数据表(PDF) 4 Page - International Rectifier |
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IRF7526D1PBF 数据表(HTML) 4 Page - International Rectifier |
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4 / 10 page  IRF7526D1PbF 4 www.irf.com Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area 0 4 8 12 16 20 024 68 10 12 G A Q , Total Gate Charge (nC) V = -24V V = -15V DS DS I = -1.2A D FOR TEST CIRCUIT SEE FIGURE 9 0.1 1 10 100 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) T = 25°C T = 150°C Single Pulse A -V , Drain-to-Source Voltage (V) DS A J 100µs 1ms 10ms 0 100 200 300 400 1 10 100 A DS -V , Drain-to-Source Voltage (V) V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd Ciss Coss Crss 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 T = 25°C T = 150°C J J V = 0V GS SD A -V , Source-to-Drain Voltage (V) Power Mosfet Characteristics |
类似零件编号 - IRF7526D1PBF |
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类似说明 - IRF7526D1PBF |
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