82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

August, 2013

2SA1419/2SC3649

Bipolar Transistor

(–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

Adoption of FBET, MBIT processes

•

High breakdown voltage and large current capacity

•

Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)180

V

Collector-to-Emitter Voltage

VCEO

(--)160

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)1.5

A

Collector Current (Pulse)

ICP

(--)2.5

A

Collector Dissipation

PC

500

mW

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7007B-004

Ordering number : EN2007C

Product & Package Information

• Package

: PCP

• JEITA, JEDEC

: SC-62, SOT-89, TO-243

• Minimum Packing Quantity : 1,000 pcs./reel

Packing Type: TD

Marking

Electrical Connection

TD

1 : Base

2 : Collector

3 : Emitter

PCP

1.5

0.5

0.4

3.0

4.5

1.6

0.4

12

3

1.5

0.75

Top View

Bottom View

2SA1419S-TD-E

2SA1419S-TD-H

2SA1419T-TD-E

2SA1419T-TD-H

2SC3649S-TD-E

2SC3649S-TD-H

2SC3649T-TD-E

2SC3649T-TD-H

2SC3649

2SA1419

RANK

RANK

2

3

1

2SC3649

2

3

1

2SA1419