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IRF7343QPBF_15 Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF7343QPBF_15
说明  Advanced Process Technology
下载  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

 
 1 page
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N-Ch
P-Ch
VDSS 55V
-55V
RDS(on) 0.050Ω 0.105Ω
HEXFET® Power MOSFET
08/09/10
IRF7343QPBF
Description
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Max.
N-Channel
P-Channel
Units
VDS
Drain-Source Voltage
55
-55
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.7
-3.4
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.8
-2.7
IDM
Pulsed Drain Current 
38
-27
PD@TA = 25°C
Maximum Power Dissipation
…
2.0
W
PD@TA = 70°C
Maximum Power Dissipation
…
1.3
W
EAS
Single Pulse Avalanche Energyƒ
72
114
mJ
IAR
Avalanche Current
4.7
-3.4
A
EAR
Repetitive Avalanche Energy
0.20
mJ
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
A
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
…
–––
62.5
°C/W
Thermal Resistance
www.irf.com
1
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Lead-Free
These HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating.These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
PD - 96110A




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