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IRF6893MTRPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRF6893MTRPBF
功能描述  RoHs Compliant Containing No Lead and Bromide
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF6893MTRPBF 数据表(HTML) 1 Page - International Rectifier

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www.irf.com
1
02/22/12
IRF6893MPbF
IRF6893MTRPbF
DirectFET®
plus MOSFET with Schottky Diode ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.4mH, RG = 50, IAS = 23A.
Notes:
MX
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
l RoHs Compliant Containing No Lead and Bromide

l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
l Footprint compatible to DirectFET
PD - 97761
ISOMETRIC
0
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
ID = 29A
TJ = 25°C
TJ = 125°C
0
1020
3040506070
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 23A
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max
1.2m
@ 10V 1.6m@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
370
Max.
23
168
230
±16
25
29
23
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
25nC
8.5nC
2.5nC
36nC
29nC
1.6V


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