数据搜索系统,热门电子元器件搜索
Selected language     Chinese  ▼
部分名称
         详细搜索


IRF6633PBF_15 Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRF6633PBF_15
说明  Low Conduction Losses and Switching Losses
下载  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 

 
 1 page
background image
www.irf.com
1
5/3/06
DirectFET
™ Power MOSFET ‚
Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.51mH, RG = 25Ω, IAS = 13A.
Notes:
DirectFET
™ ISOMETRIC
MP
SQ
SX
ST
MQ
MX
MT
MP
0
4
8
1216
2024
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 16V
VDS= 10V
ID= 13A
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 4.1m
Ω@ 10V 7.0mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
4.0nC
1.2nC
32nC
8.8nC
1.8V
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
0
5
10
15
20
TJ = 25°C
TJ = 125°C
ID = 16A
PD - 97083
IRF6633PbF
IRF6633TRPbF
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
13
Max.
13
59
132
±20
20
16
41
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques





HTML 页

1  2  3  4  5  6  7  8  9  10 


数据表 下载




链接网址

ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl