Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

°C/W

–––

40

Thermal Resistance

S

D

G

advanced processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable device for use in

a wide variety of applications.

sizes up to HEX-4. It provides the highest power capability and the lowest

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF3710L) is available for low-profile applications.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

‡

57

‡

40

A

Pulsed Drain Current

‡

180

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



28

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ‡

5.8

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

IRF3710SPbF

TO-262

IRF3710LPbF

IRF3710SPbF

IRF3710LPbF