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IRF200B211 数据表(PDF) 3 Page - International Rectifier |
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IRF200B211 数据表(HTML) 3 Page - International Rectifier |
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3 / 10 page  IRF200B211 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 13 ––– ––– S VDS = 50V, ID = 7.2A Qg Total Gate Charge ––– 15.3 23 ID = 7.2A Qgs Gate-to-Source Charge ––– 5.1 ––– VDS = 100V Qgd Gate-to-Drain Charge ––– 5.6 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 10.2 ––– td(on) Turn-On Delay Time ––– 6.5 ––– ns VDD = 130V tr Rise Time ––– 9.5 ––– ID = 7.2A td(off) Turn-Off Delay Time ––– 11.3 ––– RG= 2.7 tf Fall Time ––– 6.5 ––– VGS = 10V Ciss Input Capacitance ––– 790 ––– pF VGS = 0V Coss Output Capacitance ––– 62 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 21 ––– ƒ = 1.0MHz, See Fig.TBD Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 66 ––– VGS = 0V, VDS = 0V to 160V Coss eff.(TR) Output Capacitance (Time Related) ––– 83 ––– VGS = 0V, VDS = 0V to 160V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 12 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 34 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 1.3 V TJ = 25°C, IS = 7.2A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 32.5 ––– V/ns TJ =175°C,IS = 7.2A,VDS = 200V trr Reverse Recovery Time ––– 68 ––– ns TJ = 25°C VDD = 100V ––– 83 ––– TJ = 125°C IF = 7.2A, Qrr Reverse Recovery Charge ––– 195 ––– nC TJ = 25°C di/dt = 100A/µs ––– 280 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 4.3 ––– A TJ = 25°C nC D S G |
类似零件编号 - IRF200B211 |
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类似说明 - IRF200B211 |
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