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IRF100B202 数据表(PDF) 3 Page - International Rectifier |
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IRF100B202 数据表(HTML) 3 Page - International Rectifier |
3 / 10 page 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 18, 2014 IRF100B202 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 123 ––– ––– S VDS = 10V, ID =58A Qg Total Gate Charge ––– 77 116 nC ID = 58A Qgs Gate-to-Source Charge ––– 20 ––– VDS = 50V Qgd Gate-to-Drain Charge ––– 23 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 54 ––– td(on) Turn-On Delay Time ––– 11 ––– ns VDD = 65V tr Rise Time ––– 56 ––– ID = 58A td(off) Turn-Off Delay Time ––– 55 ––– RG= 2.7 tf Fall Time ––– 58 ––– VGS = 10V Ciss Input Capacitance ––– 4476 ––– pF VGS = 0V Coss Output Capacitance ––– 319 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 154 ––– ƒ = 1.0MHz, See Fig.5 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 355 ––– VGS = 0V, VDS = 0V to 80V Coss eff.(TR) Output Capacitance (Time Related) ––– 385 ––– VGS = 0V, VDS = 0V to 80V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 97 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 380 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 58A,VGS = 0V trr Reverse Recovery Time ––– 51 ––– ns TJ = 25°C VDD = 85V ––– 58 ––– TJ = 125°C IF = 58A, Qrr Reverse Recovery Charge ––– 105 ––– nC TJ = 25°C di/dt = 100A/µs ––– 133 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 3.7 ––– A TJ = 25°C dv/dt Peak Diode Recovery dv/dt ––– 28 ––– V/ns TJ = 175°C,IS =58A,VDS = 100V D S G |
类似零件编号 - IRF100B202_15 |
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类似说明 - IRF100B202_15 |
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