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KMD7D5P40QA 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KMD7D5P40QA 数据表(HTML) 1 Page - KEC(Korea Electronics) |
1 / 4 page 2012. 11. 27 1/4 SEMICONDUCTOR TECHNICAL DATA KMD7D5P40QA P-Ch Trench MOSFET Revision No : 2 GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit. FEATURES ・V DSS=-40V, ID=-7.5A. ・Drain-Source ON Resistance. RDS(ON)=30mΩ(Max.) @ VGS=-10V RDS(ON)=37mΩ(Max.) @ VGS=-4.5V ・Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 ℃ Unless otherwise noted) FLP-8 0.20+0.1/-0.05 P T 1.27 U 0.1 MAX MILLIMETERS 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 B2 G H L D A B1 DIM 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ G H B1 B2 1 4 5 8 A P D L T U Note : *Surface Mounted on 1 × 1 FR4 Board, t≤10sec 1 2 3 4 8 7 6 5 S S S G D D D D 1 2 3 4 8 7 6 5 KMD7D5P 40QA PIN CONNECTION (TOP VIEW) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage VDSS -40 V Gate Source Voltage VGSS ±20 V Drain Current DC@Ta=25 ℃ ID* -7.5 A Pulsed IDP -30 A Drain Source Diode Forward Current IS -30 A Drain Power Dissipation DC@Ta=25 ℃ PD* 2.0 W Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Thermal Resistance, Junction to Ambient RthJA* 62.5 ℃/W |
类似零件编号 - KMD7D5P40QA_15 |
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类似说明 - KMD7D5P40QA_15 |
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