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KMB8D0P30QA 数据表(PDF) 2 Page - KEC(Korea Electronics) |
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KMB8D0P30QA 数据表(HTML) 2 Page - KEC(Korea Electronics) |
2 / 4 page 2009. 6. 15 2/4 KMB8D0P30QA Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ℃) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=-250μ A -30 - - V Drain Cut-off Current IDSS VGS=0V, VDS=-24V - - -1 μA Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=-250μ A -1.0 - -3.0 V Drain to Source On Resistance RDS(ON) VGS=-10V, ID=-8A (Note2) - 15 20 m Ω VGS=-4.5V, ID=-5A (Note2) - 25 35 Forward Transconductance gfs VDS=-5V, ID=-8A (Note2) - 6 - S Dynamic Input Capaclitance Ciss VDS=-15V, VGS=0V, f=1MHz (Note2) - 1371 - pF Ouput Capacitance Coss - 295 - Reverse Transfer Capacitance Crss - 176 - Total Gate Charge VGS=10V Qg VDS=-15V, VGS=-10V, ID=-8A (Note2) - 28.2 - nC VGS=4.5V - 15.0 - Gate to Source Charge Qgs - 5.0 - Gate to Drain Charge Qgd - 6.4 - Turn-On Delay Time td(on) VDS=-15V, VGS=-10V ID=-8A, RG=1.6Ω (Note2) - 11.2 - ns Turn-On Rise Time tr - 5.8 - Turn-Off Delay Time td(off) - 65.0 - Turn-Off Fall Time tf - 25.0 - Source to Drain Diode Ratings Source to Drain Forward Voltage VSD VGS=0V, IS=-1.7A (Note2) - -0.75 -1.2 V Note2) Pulse Test : Pulse Width ≤300㎲, Duty Cycle≤2% |
类似零件编号 - KMB8D0P30QA_15 |
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类似说明 - KMB8D0P30QA_15 |
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