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KMB7D1DP30QA 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KMB7D1DP30QA 数据表(HTML) 1 Page - KEC(Korea Electronics) |
1 / 5 page 2007. 4. 17 1/5 SEMICONDUCTOR TECHNICAL DATA KMB7D1DP30QA Dual P-Ch Trench MOSFET Revision No : 0 General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and Load Switch. FEATURES ・V DSS=-30V, ID=-7.1A ・Drain-Source ON Resistance RDS(ON)=25mΩ(Max.) @ VGS=-10V RDS(ON)=41mΩ(Max.) @ VGS=-4.5V ・Super Hige Dense Cell Design MAXIMUM RATING (Ta=25 ℃) FLP-8 0.20+0.1/-0.05 P T 1.27 U 0.1 MAX MILLIMETERS 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 B2 G H L D A B1 DIM 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ G H B1 B2 1 4 5 8 A P D L T U Note : Surface Mounted on FR4 Board, t ≤10sec. PIN CONNECTION (TOP VIEW) 1 2 3 4 8 7 6 5 S1 G1 S2 G2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 CHARACTERISTIC SYMBOL P-Ch UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current DC@TA=25℃ ID -7.1 A DC@TA=70℃ -5.7 Pulsed IDP -40 Drain-Source-Diode Forward Current IS -1.7 A Drain Power Dissipation TA=25℃ PD 1.1 W TA=70℃ 0.7 Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Resistance, Junction to Ambient RthJA 110 ℃/W KMB7D1DP 30QA 705 |
类似零件编号 - KMB7D1DP30QA_15 |
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类似说明 - KMB7D1DP30QA_15 |
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