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DMP2060UFDB-13 Datasheet(数据表) 2 Page - Diodes Incorporated

部件型号  DMP2060UFDB-13
说明  DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
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DMP2060UFDB-13 Datasheet(HTML) 2 Page - Diodes Incorporated

   
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DMP2060UFDB
Document number: DS37422 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP2060UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.2
-2.5
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
-1.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-18
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
PD
1.4
W
t < 5s
2.2
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
92
°C/W
t < 5s
55
Thermal Resistance, Junction to Case (Note 5)
RJC
30
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1.0
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
±10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
-0.35
-1.4
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
59
90
m
Ω
VGS = -4.5V, ID = -2.9A
76
137
VGS = -2.5V, ID = -2.3A
Diode Forward Voltage
VSD
-0.65
-1.2
V
VGS = 0V, IS = -3.0A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
881
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
84
pF
Reverse Transfer Capacitance
Crss
67
pF
Gate Resistance
Rg
14.3
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
11
nC
VDS = -10V, ID = -3.7A
Total Gate Charge (VGS = -8V)
18
nC
Gate-Source Charge
Qgs
1.5
nC
Gate-Drain Charge
Qgd
2.3
nC
Turn-On Delay Time
tD(on)
5.0
ns
VDD = -10V, VGS = -4.5V,
RL = 3.3Ω, RG = 1Ω
Turn-On Rise Time
tr
9.5
ns
Turn-Off Delay Time
tD(off)
29.7
ns
Turn-Off Fall Time
tf
20.4
ns
Body Diode Reverse Recovery Time
trr
23.6
nS
IS = -3.0A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
11.4
nC
IS = -3.0A, dI/dt = 100A/μs
Notes:
5. Device mounted on
on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to product testing.




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