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DMP3050LVT_15 Datasheet(数据表) 2 Page - Diodes Incorporated

部件型号  DMP3050LVT
说明  P-CHANNEL ENHANCEMENT MODE MOSFET
下载  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
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DMP3050LVT Datasheet(HTML) 2 Page - Diodes Incorporated

   
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DMP3050LVT
Document number: DS35763 Rev. 3 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP3050LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage (Note 5)
VGSS
±25
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.5
-3.5
A
t<10s
TA = +25°C
TA = +70°C
ID
-5.2
-4.1
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-2
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
IDM
-30
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.8
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
72
°C/W
t<10s
51
Thermal Resistance, Junction to Case (Note 6)
Steady State
RθJC
24
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-
-
-1
μA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1.0
-
-2.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
-
38
50
VGS = -10V, ID = -4.5A
-
65
90
VGS = -4.5V, ID = -3A
Forward Transfer Admittance
|Yfs|
-
7.2
-
S
VDS = -5V, ID = -5A
Diode Forward Voltage
VSD
-
-0.7
-1.0
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
-
620
-
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
83
-
pF
Reverse Transfer Capacitance
Crss
-
62
-
pF
Gate resistance
Rg
-
10.8
-
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
-
5.1
-
nC
VDS = -15V, ID = -6A
Total Gate Charge (VGS = 10V)
Qg
-
10.5
-
nC
Gate-Source Charge
Qgs
-
1.8
-
nC
Gate-Drain Charge
Qgd
-
1.9
-
nC
Turn-On Delay Time
tD(on)
-
6.8
-
ns
VDD = -15V, VGS = -10V,
RG = 6Ω, ID = -1A
Turn-On Rise Time
tr
-
4.9
-
ns
Turn-Off Delay Time
tD(off)
-
28.4
-
ns
Turn-Off Fall Time
tf
-
12.4
-
ns
Notes:
5. AEC-Q101 VGS maximum is ±20V
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.




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