MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N4296

2N4298

2N4299

UNITS

Collector-Base Voltage

VCBO

350

500

350

V

Collector-Emitter Voltage

VCEO

250

350

250

V

Emitter-Base Voltage

VEBO

4.0

V

Continuous Collector Current

IC

1.0

A

Continuous Base Current

IB

250

mA

Power Dissipation

PD

20

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +175

°C

Thermal Resistance

JC

7.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

2N4296

2N4298

2N4299

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

MIN MAX

UNITS

ICEV

VCE=150V, VBE=1.5V, TC=135°C

-

600

-

600

-

600

μA

ICBO

VCB=350V

-

100

-

-

-

100

μA

ICBO

VCB=500V

-

-

-

100

-

-

μA

IEBO

VBE=4.0V

-

100

-

100

-

100

μA

BVCEO

IC=50mA

200

-

350

-

250

-

V

VCE(SAT)

IC=50mA, IB=5.0mA

-

0.9

-

0.9

-

0.75

V

VBE(SAT)

IC=50mA, IB=5.0mA

-

1.5

-

1.5

-

1.5

V

VBE(ON)

VCE=10V, IC=100mA

-

0.9

-

0.9

-

0.9

V

hFE

VCE=10V, IC=5.0mA

35

-

20

-

35

-

hFE

VCE=10V, IC=50mA

50

150

25

75

50

150

hFE

VCE=10V, IC=100mA

35

-

20

-

35

-

fT

VCE=10V, IC=20mA, f=5.0MHz

20

-

20

-

20

-

MHz

Ccb

VCB=100V, IC=0, f=0.1 to 1.0MHz

-

6.0

-

6.0

-

6.0

pF

ton

VCC=100V, IC=100mA, IB1=IB2=10mA

-

7.0

-

7.0

-

7.0

μs

toff

VCC=200V, IC=100mA, IB1=IB2=10mA

-

10

-

10

-

10

μs

IS/b

VCE=200V

75

-

75

-

75

-

mA

2N4296

2N4298

2N4299

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4296, 2N4298,

and 2N4299 devices are silicon NPN power transistors

designed for power amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R1 (2-September 2014)

www.centr a lsemi.com