MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N3738

2N3739

UNITS

Collector-Base Voltage

VCBO

250

325

V

Collector-Emitter Voltage

VCEO

225

300

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

2.0

A

Continuous Base Current

IB

0.5

A

Peak Base Current

IBM

1.0

A

Power Dissipation

PD

20

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

7.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

0.1

mA

ICEV

VCE=250V, VBE=1.5V (2N3738)

0.5

mA

ICEV

VCE=300V, VBE=1.5V (2N3739)

0.5

mA

ICEV

VCE=125V, VBE=1.5V, TC=100°C (2N3738)

1.0

mA

ICEV

VCE=200V, VBE=1.5V, TC=100°C (2N3739)

1.0

mA

ICEO

VCE=125V (2N3738)

0.25

mA

ICEO

VCE=200V (2N3739)

0.25

mA

IEBO

VEB=6.0V

0.1

mA

BVCEO

IC=5.0mA, (2N3738)

225

V

BVCEO

IC=5.0mA, (2N3739)

300

V

VCE(SAT) IC=250mA, IB=25mA

2.5

V

VBE(ON)

VCE=10V, IC=100mA

1.0

V

hFE

VCE=10V, IC=50mA

30

hFE

VCE=10V, IC=100mA

40

200

hFE

VCE=10V, IC=250mA

25

hfe

VCE=20V, IC=100mA, f=1.0kHz

35

fT

VCE=10V, IC=100mA, f=10MHz

10

MHz

Cob

VCB=100V, IE=0, f=100kHz

20

pF

2N3738

2N3739

SILICON

NPN POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739

are silicon epitaxial NPN power transistors designed for

high voltage amplifier applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R1 (2-September 2014)

www.centr a lsemi.com