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2N3506 数据表(PDF) 1 Page - Central Semiconductor Corp |
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2N3506 数据表(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page (Continued) R1 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DATA SHEET DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL 2N3506 2N3507 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO ` 40 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 3.0 A Power Dissipation PD 1.0 W Power Dissipation (TC=25°C) PD 5.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 °C Thermal Resistance ΘJA 175 °C/W Thermal Resistance ΘJC 35 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 2N3506 2N3507 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICEV VCE=40V, VEB(off)=4.0V 1.0 µA ICEV VCE=40V, VEB(off)=4.0V, TA=100°C 150 µA ICEV VCE=60V, VEB(off)=4.0V 1.0 µA ICEV VCE=60V, VEB(off)=4.0V, TA=100°C 150 µA BVCBO IC=100µA 60 80 V BVCEO IC=10mA 40 50 V BVEBO IE=10µA 5.0 5.0 V VCE(SAT) IC=500mA, IB=50mA 0.5 0.5 V VCE(SAT) IC=1.5A, IB=150mA 1.0 1.0 V VCE(SAT) IC=2.5A, IB=250mA 1.5 1.5 V VBE(SAT) IC=500mA, IB=50mA 1.0 1.0 V VBE(SAT) IC=1.5A, IB=150mA 0.9 1.4 0.9 1.4 V VBE(SAT) IC=2.5A, IB=250mA 2.0 2.0 V |
类似零件编号 - 2N3506_15 |
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类似说明 - 2N3506_15 |
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