2N2920

2N2920A

SILICON

DUAL NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A

are dual silicon NPN transistors manufactured by the

epitaxial planar process utilizing two individual chips

mounted in a hermetically sealed metal case designed

for differential amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

30

mA

Power Dissipation (One Die)

PD

300

mW

Power Dissipation (Both Dice)

PD

500

mW

Power Dissipation (One Die, TC=25°C)

PD

750

mW

Power Dissipation (Both Dice, TC=25°C)

PD

1.5

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=45V

2.0

nA

ICEO

VCE=5.0V

2.0

nA

IEBO

VEB=5.0V

2.0

nA

BVCBO

IC=10μA

60

V

BVCEO

IC=10mA

60

V

BVEBO

IE=10μA

6.0

V

VCE(SAT)

IC=1.0mA, IB=100μA

0.35

V

VBE(ON)

VCE=5.0V, IC=100μA

0.70

V

hFE

VCE=5.0V, IC=10μA

150

600

hFE

VCE=5.0V, IC=10μA, TA=-55°C

40

hFE

VCE=5.0V, IC=100μA

225

hFE

VCE=5.0V, IC=1.0mA

300

fT

VCE=5.0V, IC=500μA, f=20MHz

60

MHz

Cob

VCB=5.0V, IE=0, f=140kHz

6.0

pF

NF

VCE=5.0V, IC=10μA, RS=10kΩ,

f=1.0kHz, BW=200Hz

3.0

dB

TO-78 CASE

R1 (4-April 2014)

www.centr a lsemi.com