CXT3820

SURFACE MOUNT

VERY LOW VCE(SAT)

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT3820 is a

very low VCE(SAT) NPN transistor designed for

applications where electrical and thermal efficiency

are prime requirements. Packaged in an industry

standard SOT-89 case, this device brings updated

electrical specifications and characteristics suitable for

the most demanding designs.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

2.0

A

Continuous Base Current

IB

300

mA

Power Dissipation

PD

1.2

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

104

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=60V

100

nA

IEBO

VEB=5.0V

100

nA

BVCBO

IC=100µA

80

V

BVCEO

IC=10mA

60

V

BVEBO

IE=100µA

5.0

V

VCE(SAT)

IC=100mA, IB=1.0mA

0.115

V

VCE(SAT)

IC=500mA, IB=50mA

0.15

V

VCE(SAT)

IC=1.0A, IB=100mA

0.28

V

VBE(SAT)

IC=1.0A, IB=50mA

1.1

V

VBE(ON)

VCE=5.0V, IC=1.0A

0.9

V

hFE

VCE=5.0V, IC=1.0mA

200

hFE

VCE=5.0V, IC=500mA

200

hFE

VCE=5.0V, IC=1.0A

100

fT

VCE=10V, IC=50mA

150

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

10

pF

FEATURES:

• High Current (IC=1.0A)

• VCE(SAT)=0.28V MAX @ IC=1.0A

• SOT-89 surface mount package

• Complementary PNP device: CXT7820

APPLICATIONS:

• DC/DC Converters

• Voltage Clamping

• Protection Circuits

• Battery powered Cell Phones, Pagers,

Digital Cameras, PDAs, Laptops, etc.

SOT-89 CASE

R1 (23-February 2010)

www.centra lsemi.com

• Device is Halogen Free by design