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DZTA92 数据表(PDF) 1 Page - Diodes Incorporated |
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DZTA92 数据表(HTML) 1 Page - Diodes Incorporated |
1 / 4 page DS30521 Rev. 4 - 2 1 of 4 www.diodes.com DZTA92 © Diodes Incorporated DZTA92 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DZTA42) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.115 grams (approximate) 2 3 4 1 SOT-223 3 1 2,4 COLLECTOR EMITTER BASE 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Base Current IB -100 mA Continuous Collector Current IC -500 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation @ TA = 25°C (Note 3) Pd 1 W Thermal Resistance, Junction to Ambient @ TA = 25°C (Note 3) RθJA 125 οC/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -300 ⎯ ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -300 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = -100μA, IC = 0 Collector-Base Cut-Off Current ICBO ⎯ ⎯ -0.25 μA VCB = -200V, IE = 0 Emitter-Base Cut-Off Current IEBO ⎯ ⎯ -0.1 μA VEB = -3V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ -0.5 V IC = -20mA, IB = -2mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ -0.9 V IC = -20mA, IB = -2mA 25 ⎯ ⎯ IC = -1mA, VCE = -10V 40 ⎯ ⎯ IC = -10mA, VCE = -10V DC Current Gain hFE 25 ⎯ ⎯ V IC = -30mA, VCE = -10V SMALL SIGNAL CHARACTERISTICS Gain-Bandwidth Product fT 50 ⎯ ⎯ MHz IC = -10mA, VCE = -20V, f = 100MHz Output Capacitance Cobo ⎯ ⎯ 6 pF VCB = -20V, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2% |
类似零件编号 - DZTA92_15 |
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类似说明 - DZTA92_15 |
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