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TSG60N100CE 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSG60N100CE 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 9 page TSG60N100CE N-Channel IGBT with FRD. 1/9 Version: B12 TO-264 PRODUCT SUMMARY VCES (V) VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features ● 1000V NPT Trench Technology ● High Speed Switching ● Low Conduction Loss Block Diagram NPT Trench IGBT Ordering Information Part No. Package Packing TSG60N100CE C0 TO-264 25pcs / Tube Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES ±20 V Continuous Current TC=25 oC IC 60 A TC=100 oC 42 A Pulsed Collector Current * ICM 200 A Diode Continuous Forward Current (TC=100 ) ℃ IF 15 A Max Power Dissipation TJ=25 oC PD 208 W TJ=100 oC 83 Operating Junction Temperature TJ -55 to +150 ºC Storage Temperature Range TSTG -55 to +150 oC * Repetitive rating: Pulse width limited by max. junction temperature Pin Definition: 1. Gate 2. Collector 3. Emitter |
类似零件编号 - TSG60N100CE |
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类似说明 - TSG60N100CE |
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