SS8P6C-M3-86A datasheet(1/6 Pages) VISHAY

部件名	SS8P6C-M3-86A

功能描述	Dual Common Cathode Schottky Rectifier

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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SS8P5C, SS8P6C

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Vishay General Semiconductor

Revision: 16-Jan-14

1

Document Number: 89028

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Current Density Surface Mount

Dual Common Cathode Schottky Rectifier

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, and

polarity protection application.

MECHANICAL DATA

Case: TO-277A (SMPC)



Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

automotive grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

IF(AV)

2 x 4.0 A

VRRM

50 V, 60 V

IFSM

120 A

EAS

20 mJ

VF at IF = 4 A

0.56 V

TJ max.

150 °C

Package

TO-277A

Diode variations

Single

TO-277A (SMPC)

K

2

1

Anode 1

Anode 2

Cathode

K

eSMP® Series

Available

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS8P5C

SS8P6C

UNIT

Device marking code

S85C

S86C

Maximum repetitive peak reverse voltage

VRRM

50

60

V

Maximum average forward rectified current (fig. 1)

total device

IF(AV)

8.0

A

per diode

4.0

Peak forward surge current 10 ms single half sine-wave



superimposed on rated load

IFSM

120

A

Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode

EAS

20

mJ

Operating junction and storage temperature range

TJ, TSTG

-55 to +150

°C

类似零件编号 - SS8P6C-M3-86A

制造商	部件名	数据表	功能描述
Vishay Siliconix	SS8P6C-M3-86A	98Kb / 5P	High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier Revision: 17-May-11

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