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BYG23MR3G 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 BYG23MR3G
功能描述  High Efficient Surface Mount Rectifiers
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

BYG23MR3G 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 available
The superior avalanche capability of BYG23M is specially
suited for free-wheeling, clamping, snubbering,
demagnetization in power supplies and other power switching applications.
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
VRRM
V
VRMS
V
VDC
V
IF(AV)
A
trr
ns
CJ
pF
RθJA
OC/W
TJ
OC
TSTG
OC
Document Number: DS_D1411087
Version: B14
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-214AC (SMA)
DO-214AC (SMA)
BYG23M
Taiwan Semiconductor
High Efficient Surface Mount Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Polarity:
Indicated by cathode band
Weight:
0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
BYG23M
1000
50
Maximum DC blocking voltage
Maximum average forward rectified current (@TA=65°C)
1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
65
Typical junction capacitance (Note 3)
Maximum reverse current @ rated VR TJ=25°C
TJ=100°C
TJ=125°C
IR
μA
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
V
15
Storage temperature range
700
1000
1.7
1
ERSM
30
- 55 to +150
Typical thermal resistance
70
TYPICAL APPLICATION
mJ
- 55 to +150
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
15
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) TA=25℃, I(BR)R =1.23A
Maximum reverse recovery time (Note 2)
Operating junction temperature range


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