BC817_15 datasheet(4/7 Pages) DIODES

部件名	BC817

功能描述	45V NPN SMALL SIGNAL TRANSISTOR IN SOT23

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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4 / 7 page

BC817-16/ -25/ -40

Document number: DS11107 Rev. 20 - 2

4 of 7

www.diodes.com

March 2015

BC817-16/-25/-40

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

50

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCEO

45

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

5

—

V

IC = 100µA

Collector-Emitter Cut-Off Current

ICES

—

100

5.0

nA

µA

VCE = 45V

VCE = 25V, TJ = +150°C

Emitter-Base Cut-Off Current

IEBO

—

100

nA

VEB = 5.0V

DC Current Gain (Note 10)

BC817-16

BC817-25

BC817-40

hFE

100

160

250

—

250

400

600

—

VCE = 1.0V, IC = 100mA

BC817-16

BC817-25

BC817-40

60

100

170

—

VCE = 1.0V, IC = 300mA

Collector-Emitter Saturation Voltage (Note 10)

VCE(SAT)

—

0.7

V

IC = 500mA, IB = 50mA

Base-Emitter Voltage (Note 10)

VBE

—

1.2

V

VCE = 1.0V, IC = 300mA

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 50MHz

Collector-Base Capacitance

CCBO

—

12

pF

VCB = 10V, f = 1.0MHz

Note:

10.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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