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DFM200PXM33-F000_15 Datasheet(数据表) 3 Page - Dynex Semiconductor

部件型号  DFM200PXM33-F000
说明  Fast Recovery Diode Module
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
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DFM200PXM33-F000 Datasheet(HTML) 3 Page - Dynex Semiconductor

   
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DFM200PXM33-F000
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www.dynexsemi.com
STATIC ELECTRICAL CHARACTERISTICS
– PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IRM
Peak reverse current
VR = 3300V, Tj = 125°C
15
mA
VF
Forward voltage
IF = 200A
2.9
V
IF = 200A, Tj = 125°C
3.0
V
LM
Inductance
-
40
nH
DYNAMIC ELECTRICAL CHARACTERISTICS
– PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
Qrr
Reverse recovery charge
IF = 200A
VR = 1800V
dIF/dt = 1600A/μs
80
μC
Irr
Peak reverse recovery current
150
A
Erec
Reverse recovery energy
75
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
Qrr
Reverse recovery charge
IF = 200A
VR = 1800V
dIF/dt = 1600A/μs
125
μC
Irr
Peak reverse recovery current
160
A
Erec
Reverse recovery energy
130
mJ




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