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DFM200PXM33-F000_15 Datasheet(数据表) 2 Page - Dynex Semiconductor

部件型号  DFM200PXM33-F000
说明  Fast Recovery Diode Module
下载  6 Pages
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
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DFM200PXM33-F000 Datasheet(HTML) 2 Page - Dynex Semiconductor

   
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DFM200PXM33-F000
2/6
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
VRRM
Repetitive peak reverse voltage
Tj = 125°C
3300
V
IF
Forward current (per arm)
DC, Tcase = 70°C
200
A
IFM
Max. forward current (per arm)
Tcase = 105°C, tp = 1ms
400
A
I
2t
I
2t value fuse current rating
VR = 0, tp = 10ms, Tj = 125°C
20
kA
2s
Pmax
Max. power dissipation
Tcase = 25°C, Tj = 125°C
1040
W
Visol
Isolation voltage
– per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
6000
V
QPD
Partial discharge
– per module
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
10
pC
VRRM DC
DC Voltage stability
25°C at sea level, 100 FITs
2200
V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
Rth(j-c)
Thermal resistance (per arm)
Continuous dissipation
junction to case
-
-
96
°C/kW
Rth(c-h)
Thermal resistance
case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
-
-
16
°C/kW
Tj
Junction temperature
-40
-
125
°C
Tstg
Storage temperature range
-40
-
125
°C
Screw Torque
Mounting
– M6
-
-
5
Nm
Electrical connections
– M5
-
-
4
Nm




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