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IRLI640G 数据表(PDF) 2 Page - International Rectifier |
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IRLI640G 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLI640G Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 9.9A, VGS = 0V trr Reverse Recovery Time ––– 310 470 ns TJ = 25°C, IF = 17A Qrr Reverse RecoveryCharge ––– 3.2 4.8 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 4.4mH RG = 25Ω, IAS = 9.9A. (See Figure 12) ISD ≤ 17A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.18 VGS = 5.0V, ID = 5.9A ––– ––– 0.27 VGS = 4.0V, ID = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 16 ––– ––– S VDS = 50V, ID = 10A ––– ––– 25 VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 160°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V Qg Total Gate Charge ––– ––– 66 ID = 17A Qgs Gate-to-Source Charge ––– ––– 9.0 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 38 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.0 ––– VDD = 100V tr Rise Time ––– 83 ––– ID = 17A td(off) Turn-Off Delay Time ––– 44 ––– RG = 4.6Ω tf Fall Time ––– 52 ––– RD = 5.7Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1800 ––– VGS = 0V Coss Output Capacitance ––– 400 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz, See Fig. 5 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 40 ––– ––– 9.9 A ns IDSS Drain-to-Source Leakage Current IGSS LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– nH nA µA RDS(ON) Static Drain-to-Source On-Resistance Ω t=60s, ƒ=60Hz Next Data Sheet Index Previous Datasheet To Order |
类似零件编号 - IRLI640G |
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类似说明 - IRLI640G |
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