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2SJ534 数据表(PDF) 5 Page - Renesas Technology Corp |
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2SJ534 数据表(HTML) 5 Page - Renesas Technology Corp |
5 / 10 page 2SJ534 Rev.5.00 Sep 07, 2005 page 3 of 7 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –20 0 –4 –8 –12 –16 0–2 –4 –6 –8 –10 –20 0 –4 –8 –12 –16 0 –1–2–3–4–5 Tc = 75°C 40 0 10 20 30 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –6 V –4 V –2.5 V –3.5 V –3 V VGS = –2 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area 100 3 10 300 30 1 0.3 0.1 0.1 0.3 1 3 10 30 100 1000 Ta = 25°C PW = 10 ms (1 shot) DC Operation (Tc = 2 5°C) 1 ms 10 µs 100 µs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –3.0 0 –1.0 –0.5 –1.5 –2.0 –2.5 0 –4 –8 –12 –16 –20 Pulse Test ID = –20 A –10 A –5 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 0.02 0.05 0.01 –2 –20 –50 –1 –10 –5 –100 1 0.5 VGS = –4 V –10 V Pulse Test –25°C 25°C |
类似零件编号 - 2SJ534_15 |
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类似说明 - 2SJ534_15 |
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