数据搜索系统,热门电子元器件搜索 |
|
2SJ539 数据表(PDF) 6 Page - Renesas Technology Corp |
|
2SJ539 数据表(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page 2SJ539 Rev.3.00 Sep 07, 2005 page 4 of 7 0.5 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.1 0.2 0.3 0.4 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –5 A ID = –10 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 30 3 10 0.3 1 0.1 –0.1 –0.3 –1 –3 –30 –10 –100 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.2 –1 –2 –0.5 –5 –10 –20 500 200 50 100 20 5 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 5000 1000 2000 500 20 50 100 200 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 816 24 32 40 VDS VGS 1000 100 300 30 3 10 1 –0.2 –1 –2 –0.5 –5 –10 –20 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –10 V –25 V –50 V –10 V VGS = –4 V –2 A –5 A –1 A –1 A, –2 A VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 % |
类似零件编号 - 2SJ539_15 |
|
类似说明 - 2SJ539_15 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |