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IRFZ44NL Datasheet(数据表) 1 Page - International Rectifier

部件型号  IRFZ44NL
说明  Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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IRFZ44NL Datasheet(HTML) 1 Page - International Rectifier

 
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IRFZ44NS
IRFZ44NL
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
devicedesignthatHEXFETpowerMOSFETsarewellknown
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodatingdiesizesuptoHEX-4.Itprovidesthehighest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.0175Ω
ID = 49A
2
D
P ak
TO-26 2
S
D
G
03/13/01
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.5
RθJA
Junction-to-Ambient
–––
40
°C/W
Thermal Resistance
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
49
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
35
A
IDM
Pulsed Drain Current

160
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
94
W
Linear Derating Factor
0.63
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

25
A
EAR
Repetitive Avalanche Energy

9.4
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
www.irf.com
1
PD - 94153




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