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2SC1213A(K) 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SC1213A(K) 数据表(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SC1213A(K) Preliminary R07DS0432EJ0300 Rev.3.00 Page 2 of 6 Jun 07, 2011 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 — — V IC = 10 μA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 50 — — V IC = 1.0 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V IE = 10 μA, IC = 0 Collector cutoff current ICBO — — 0.5 μA VCB = 20 V, IE = 0 DC current transfer ratio hFE* 1 100 — 320 VCE = 3 V, IC = 10 mA hFE 10 — — VCE = 3 V, IC = 500 mA* 2 Base to emitter voltage VBE 0.64 — V VCE = 3 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) — 0.12 0.6 V IC = 150 mA, IB = 15 mA* 2 Base to emitter saturation voltage VBE(sat) — 0.83 1.2 V IC = 150 mA, IB = 15 mA* 2 Collector output capacitance Cob — 7.0 — pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product fT — 120 — MHz VCE = 3 V, IC = 10 mA Turn on time ton — 0.25 — μS VCC = 10.3 V IC = 10 IB1 = –10 IB2 = 10 mA Turn off time toff — 0.85 — μS Storage time tstg — 0.4 — μS VCC = 5 V IC = IB1 = –IB2 = 20 mA Notes: 1. The 2SC1213A(K) is grouped by hFE as follows. 2. Pulse test C D 100 to 200 160 to 320 |
类似零件编号 - 2SC1213A(K)_15 |
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类似说明 - 2SC1213A(K)_15 |
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