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IRFPS40N50L 数据表(PDF) 1 Page - International Rectifier |
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IRFPS40N50L 数据表(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFPS40N50L 05/09/01 www.irf.com 1 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) typ. ID 500V 0.087 Ω 46A Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 540 W Linear Derating Factor 4.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dtPeak Diode Recovery dv/dt 25 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings SUPER TO-247AC Benefits Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low Trr and Soft Diode Recovery l High Performance Optimised Anti-parallel Diode Typical SMPS Topologies l Bridge Converters l All Zero Voltage Switching S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 46 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 180 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 46A, VGS = 0V ––– 170 250 TJ = 25°C IF = 46A ––– 220 330 TJ = 125°C di/dt = 100A/µs ––– 705 1060 nC TJ = 25°C ––– 1.3 2.0 µCTJ = 125°C IRRM Reverse Recovery Current ––– 9.0 ––– A ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns PD- 93923B |
类似零件编号 - IRFPS40N50L |
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类似说明 - IRFPS40N50L |
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