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IRFBC30S 数据表(PDF) 2 Page - International Rectifier |
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IRFBC30S 数据表(HTML) 2 Page - International Rectifier |
2 / 10 page IRFBC30S/L Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS =3.6A, VGS = 0V trr Reverse Recovery Time ––– 370 810 ns TJ = 25°C, IF =3.6A Qrr Reverse Recovery Charge ––– 2.0 4.2 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDD =50V, starting TJ = 25°C, L =41mH RG = 25Ω, IAS = 3.6A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ 3.6A, di/dt ≤ 60A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 3000µs; duty cycle ≤ 2%.
Uses IRFBC30 data and test conditions Source-Drain Ratings and Characteristics A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.62 ––– V/°C Reference to 25°C, ID =1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.2 Ω VGS =10V, ID =2.2A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.5 ––– ––– S VDS = 50V, ID = 2.2A ––– ––– 100 µA VDS = 600V, VGS = 0V ––– ––– 500 VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 31 ID = 3.6A Qgs Gate-to-Source Charge ––– ––– 4.6 nC VDS = 360V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 300V tr Rise Time ––– 13 ––– ID = 3.6A td(off) Turn-Off Delay Time ––– 35 ––– RG = 12 Ω tf Fall Time ––– 14 ––– RD =82Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 660 ––– VGS = 0V Coss Output Capacitance ––– 86 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 19 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance 3.6 14 S D G |
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类似说明 - IRFBC30S |
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