IRFBC30S datasheet(2/10 Pages) IRF

部件名	IRFBC30S

功能描述	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

2 / 10 page

IRFBC30S/L

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.6

V

TJ = 25°C, IS =3.6A, VGS = 0V

trr

Reverse Recovery Time

–––

370

810

ns

TJ = 25°C, IF =3.6A

Qrr

Reverse Recovery Charge

–––

2.0

4.2

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VDD =50V, starting TJ = 25°C, L =41mH

RG = 25Ω, IAS = 3.6A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

ISD ≤ 3.6A, di/dt ≤ 60A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Pulse width ≤ 3000µs; duty cycle ≤ 2%.

Uses IRFBC30 data and test conditions

Source-Drain Ratings and Characteristics

A

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

600

–––

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.62

–––

V/°C

Reference to 25°C, ID =1mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.2

Ω

VGS =10V, ID =2.2A

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

2.5

–––

S

VDS = 50V, ID = 2.2A

–––

100

µA

VDS = 600V, VGS = 0V

–––

500

VDS = 480V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

nA

VGS = -20V

Qg

Total Gate Charge

–––

31

ID = 3.6A

Qgs

Gate-to-Source Charge

–––

4.6

nC

VDS = 360V

Qgd

Gate-to-Drain ("Miller") Charge

–––

17

VGS = 10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

11

–––

VDD = 300V

tr

Rise Time

–––

13

–––

ID = 3.6A

td(off)

Turn-Off Delay Time

–––

35

–––

RG = 12

Ω

tf

Fall Time

–––

14

–––

RD =82Ω, See Fig. 10

Between lead,

–––

and center of die contact

Ciss

Input Capacitance

–––

660

–––

VGS = 0V

Coss

Output Capacitance

–––

86

–––

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

19

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

ns

IDSS

Drain-to-Source Leakage Current

nH

7.5

LS

Internal Source Inductance

3.6

14

S

D

G

类似零件编号 - IRFBC30S

制造商	部件名	数据表	功能描述
Vishay Siliconix	IRFBC30S	961Kb / 8P	Power MOSFET S-Pending-Rev. A, 10-Jun-08
	IRFBC30S	310Kb / 11P	Power MOSFET 01-Jan-2022
	IRFBC30SPBF	961Kb / 8P	Power MOSFET S-Pending-Rev. A, 10-Jun-08
	IRFBC30STRLPBF	961Kb / 8P	Power MOSFET S-Pending-Rev. A, 10-Jun-08
	IRFBC30S	310Kb / 11P	Power MOSFET 01-Jan-2022

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类似说明 - IRFBC30S

制造商	部件名	数据表	功能描述
International Rectifier	IRFBC30	173Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
	IRFBC30A	101Kb / 8P	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)
	IRFBC30AS	147Kb / 10P	Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)
	IRFIBC30G	169Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
	IRFPF30	165Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
	IRFR9220	169Kb / 6P	Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)
	IRFBF30	166Kb / 6P	Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
	IRF5801	120Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A)
	IRFPC30	167Kb / 6P	Power MOSFET(Vdsss=600V, Rds(on)=2.2ohm, Id=4.3A)
	IRF7451	209Kb / 8P	Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A)