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IRFB9N60 数据表(PDF) 1 Page - International Rectifier

部件名 IRFB9N60
功能描述  Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFB9N60 数据表(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
9.2
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
5.8
A
IDM
Pulsed Drain Current

37
PD @TC = 25°C
Power Dissipation
170
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy
‚
290
mJ
IAR
Avalanche Current

9.2
A
EAR
Repetitive Avalanche Energy

17
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = 600V
RDS(on) = 0.75Ω
ID = 9.2A
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleling
l Simple Drive Requirements
Description
10/7/98
www.irf.com
1
TO-220AB
IRFB9N60A
PD - 91811


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