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IRFB9N60 数据表(PDF) 1 Page - International Rectifier |
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IRFB9N60 数据表(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.2 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.8 A IDM Pulsed Drain Current 37 PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy 290 mJ IAR Avalanche Current 9.2 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 600V RDS(on) = 0.75Ω ID = 9.2A l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleling l Simple Drive Requirements Description 10/7/98 www.irf.com 1 TO-220AB IRFB9N60A PD - 91811 |
类似零件编号 - IRFB9N60 |
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类似说明 - IRFB9N60 |
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