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IRFB61N15D 数据表(PDF) 7 Page - International Rectifier

部件名 IRFB61N15D
功能描述  Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFB61N15D 数据表(HTML) 7 Page - International Rectifier

  IRFB61N15D Datasheet HTML 1Page - International Rectifier IRFB61N15D Datasheet HTML 2Page - International Rectifier IRFB61N15D Datasheet HTML 3Page - International Rectifier IRFB61N15D Datasheet HTML 4Page - International Rectifier IRFB61N15D Datasheet HTML 5Page - International Rectifier IRFB61N15D Datasheet HTML 6Page - International Rectifier IRFB61N15D Datasheet HTML 7Page - International Rectifier IRFB61N15D Datasheet HTML 8Page - International Rectifier  
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IRFB61N15D
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
ƒ
„
‚
RG
VDD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

*


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