IRF9Z34N datasheet(5/10 Pages) KERSEMI

部件名	IRF9Z34N

功能描述	Advanced Planar Technology

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制造商	KERSEMI [Kersemi Electronic Co., Ltd.]

网页	http://www.kersemi.com

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5 / 10 page

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

20

0

10203040

G

A

Q , Total Gate Charge (nC)

FOR TEST CIRCUIT

SEE FIGURE 13

I = -10A

V

= -44V

V

= -28V

D

DS

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T = 25°C

J

V

= 0V

GS

SD

A

-V

, Source-to-Drain Voltage (V)

T = 175°C

J

1

10

100

1000

1

10

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10ms

A

-V

, Drain-to-Source Voltage (V)

DS

10μs

100μs

1ms

T

= 25°C

T

= 175°C

Single Pulse

C

J

0

200

400

600

800

1000

1200

1

10

100

A

DS

-V

, Drain-to-Source Voltage (V)

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

AUIRF9Z34N

2014-8-11

5

www.kersemi.com

类似零件编号 - IRF9Z34N

制造商	部件名	数据表	功能描述
International Rectifier	IRF9Z34N	108Kb / 8P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
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Inchange Semiconductor ...	IRF9Z34NL	273Kb / 2P	isc P-Channel MOSFET Transistor

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