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IRF7301 数据表(PDF) 1 Page - International Rectifier

部件名 IRF7301
功能描述  Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7301 数据表(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
PD - 9.1238C
8/25/97
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7301
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
T o p V iew
8
1
2
3
4
5
6
7
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 4.5V
5.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
5.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
4.1
IDM
Pulsed Drain Current

21
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
VDSS = 20V
RDS(on) = 0.050Ω
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
62.5
°C/W


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