数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

IRF540N 数据表(PDF) 2 Page - Kersemi Electronic Co., Ltd.

部件名 IRF540N
功能描述  Advanced Process Technology
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  KERSEMI [Kersemi Electronic Co., Ltd.]
网页  http://www.kersemi.com
标志 KERSEMI - Kersemi Electronic Co., Ltd.

IRF540N 数据表(HTML) 2 Page - Kersemi Electronic Co., Ltd.

  IRF540N Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 4Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 5Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 6Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 7Page - Kersemi Electronic Co., Ltd. IRF540N Datasheet HTML 8Page - Kersemi Electronic Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRF540N
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 16A, VGS = 0V
„
trr
Reverse Recovery Time
–––
115
170
ns
TJ = 25°C, IF = 16A
Qrr
Reverse Recovery Charge
–––
505
760
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
33
110
A
‚ Starting T
J = 25°C, L =1.5mH
RG = 25Ω, IAS = 16A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ƒ I
SD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
44
m
VGS = 10V, ID = 16A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
21
–––
–––
SVDS = 50V, ID = 16A
„
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
71
ID = 16A
Qgs
Gate-to-Source Charge
–––
–––
14
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
21
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 50V
tr
Rise Time
–––
35
–––
ID = 16A
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 5.1Ω
tf
Fall Time
–––
35
–––
VGS = 10V, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1960 –––
VGS = 0V
Coss
Output Capacitance
–––
250
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
40
–––
pF
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
‚
–––
700
… 185† mJ
IAS = 16A, L = 1.5mH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
2014-8-9
2
www.kersemi.com


类似零件编号 - IRF540N

制造商部件名数据表功能描述
logo
Intersil Corporation
IRF540N INTERSIL-IRF540N Datasheet
126Kb / 10P
   33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
logo
International Rectifier
IRF540N IRF-IRF540N Datasheet
99Kb / 8P
   Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
logo
Inchange Semiconductor ...
IRF540N ISC-IRF540N Datasheet
237Kb / 2P
   N-Channel Mosfet Transistor
logo
List of Unclassifed Man...
IRF540N ETC2-IRF540N Datasheet
2Mb / 31P
   SEMICONDUCTORS
logo
Fairchild Semiconductor
IRF540N FAIRCHILD-IRF540N Datasheet
138Kb / 10P
   33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET
More results

类似说明 - IRF540N

制造商部件名数据表功能描述
logo
International Rectifier
IRF3205STRR IRF-IRF3205STRR Datasheet
618Kb / 11P
   Advanced Process Technology
IRF3205ZSTRLPBF IRF-IRF3205ZSTRLPBF Datasheet
385Kb / 12P
   Advanced Process Technology
IRL2203NSTRLPBF IRF-IRL2203NSTRLPBF Datasheet
295Kb / 10P
   Advanced Process Technology
logo
Kersemi Electronic Co.,...
IRF640NS KERSEMI-IRF640NS Datasheet
1Mb / 11P
   Advanced Process Technology
IRFR48Z KERSEMI-IRFR48Z_15 Datasheet
1Mb / 12P
   Advanced Process Technology
IRLR2905Z KERSEMI-IRLR2905Z Datasheet
1Mb / 11P
   Advanced Process Technology
IRFZ24N KERSEMI-IRFZ24N Datasheet
741Kb / 8P
   Advanced Process Technology
IRFZ44N KERSEMI-IRFZ44N Datasheet
700Kb / 8P
   Advanced Process Technology
logo
International Rectifier
IRF1104SPBF IRF-IRF1104SPBF_15 Datasheet
272Kb / 11P
   Advanced Process Technology
IRF1405SPBF IRF-IRF1405SPBF_15 Datasheet
313Kb / 11P
   Advanced Process Technology
IRF2204PBF IRF-IRF2204PBF_15 Datasheet
263Kb / 9P
   Advanced Process Technology
More results


Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com