数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

IRF5305L 数据表(PDF) 2 Page - International Rectifier

部件名 IRF5305L
功能描述  Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF5305L 数据表(HTML) 2 Page - International Rectifier

  IRF5305L Datasheet HTML 1Page - International Rectifier IRF5305L Datasheet HTML 2Page - International Rectifier IRF5305L Datasheet HTML 3Page - International Rectifier IRF5305L Datasheet HTML 4Page - International Rectifier IRF5305L Datasheet HTML 5Page - International Rectifier IRF5305L Datasheet HTML 6Page - International Rectifier IRF5305L Datasheet HTML 7Page - International Rectifier IRF5305L Datasheet HTML 8Page - International Rectifier IRF5305L Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
IRF5305S/L
2
www.irf.com
‚ V
DD = -25V, Starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ I
SD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF5305 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.034 –––
V/°C
Reference to 25°C, ID = -1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.06
VGS = -10V, ID = -16A
„
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
8.0
–––
–––
S
VDS = -25V, ID = -16A
…
–––
–––
-25
µA
VDS = -55V, VGS = 0V
–––
–––
-250
VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
63
ID = -16A
Qgs
Gate-to-Source Charge
–––
–––
13
nC
VDS = -44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
29
VGS = -10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
14
–––
VDD = -28V
tr
Rise Time
–––
66
–––
ID = -16A
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 6.8Ω
tf
Fall Time
–––
63
–––
RD = 1.6Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
1200 –––
VGS = 0V
Coss
Output Capacitance
–––
520
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
250
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS
Drain-to-Source Leakage Current
nH
7.5
LS
Internal Source Inductance
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.3
V
TJ = 25°C, IS = -16A, VGS = 0V
„
trr
Reverse Recovery Time
–––
71
110
ns
TJ = 25°C, IF = -16A
Qrr
Reverse Recovery Charge
–––
170
250
nC
di/dt = -100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
S
D
G
-31
-110


类似零件编号 - IRF5305L

制造商部件名数据表功能描述
logo
Kersemi Electronic Co.,...
IRF5305L KERSEMI-IRF5305L Datasheet
1Mb / 10P
   Advanced Process Technology
logo
Inchange Semiconductor ...
IRF5305L ISC-IRF5305L Datasheet
272Kb / 2P
   isc P-Channel MOSFET Transistor
logo
International Rectifier
IRF5305LPBF IRF-IRF5305LPBF Datasheet
697Kb / 10P
   HEXFET Power MOSFET
logo
Kersemi Electronic Co.,...
IRF5305LPBF KERSEMI-IRF5305LPBF Datasheet
4Mb / 10P
   Advanced Process Technology
More results

类似说明 - IRF5305L

制造商部件名数据表功能描述
logo
International Rectifier
IRF5305 IRF-IRF5305 Datasheet
124Kb / 8P
   Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
IRFIZ44N IRF-IRFIZ44N Datasheet
106Kb / 8P
   Power MOSFET(Vdss=55V, Rds(on)=0.024ohm, Id=31A)
IRFRU5305 IRF-IRFRU5305 Datasheet
156Kb / 10P
   Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)
IRFR5305PBF IRF-IRFR5305PBF Datasheet
248Kb / 11P
   HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )
IRF5210 IRF-IRF5210 Datasheet
125Kb / 8P
   Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
IRF5210S IRF-IRF5210S Datasheet
186Kb / 10P
   Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
IRFZ24N IRF-IRFZ24N Datasheet
123Kb / 8P
   Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IRFBA1405P IRF-IRFBA1405P Datasheet
238Kb / 9P
   Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A??
IRF3205S IRF-IRF3205S Datasheet
160Kb / 10P
   Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
IRFR2605 IRF-IRFR2605 Datasheet
345Kb / 8P
   Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com