2SA1615_15 datasheet(4/7 Pages) RENESAS

部件名	2SA1615

功能描述	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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制造商	RENESAS [Renesas Technology Corp]

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4 / 7 page

Data Sheet D16119EJ2V0DS

2

2SA1615,1615-Z

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB =

−20 V, IE = 0

−1.0

μA

Emitter cutoff current

IEBO

VEB =

−8.0 V, IC = 0

−1.0

μA

DC current gain

Note

hFE1

VCE =

−2.0 V, IC = −0.5 A

200

600

DC current gain

Note

hFE2

VCE =

−2.0 V, IC = −4.0 A

160

Collector saturation voltage

Note

VCE(sat)

IC =

−4.0 A, IB = −0.05 A

−0.2

−0.25

V

Base saturation voltage

Note

VBE(sat)

IC =

−4.0 A, IB = −0.05 A

−0.9

−1.2

V

Gain bandwidth product

fT

VCE =

−5.0 V, IE = 1.5 A

180

MHz

Output capacity

Cob

VCB =

−10 V, IE = 0, f = 1.0 MHz

220

pF

Turn-on time

ton

80

ns

Storage time

tstg

300

ns

Fall time

tf

IC =

−5.0 A, IB1 = −IB2 = 0.125 A,

RL = 2.0

Ω, VCC ≅ −10 V

60

ns

Note Pulse test PW

≤ 350

μs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

L

K

hFE2

200 to 400

300 to 600

PACKAGE DRAWINGS (UNIT: mm)

2SA1615

2SA1615-Z

2

13

6.5 ±0.2

5.0 ±0.2

4

2.3

0.5 ±0.1

2.3 ±0.2

1.1 ±0.2

0.5 −0.1

+0.2

0.5 −0.1

+0.2

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

0.15 ±0.15

2.3 ±0.3

Electrode Connection

1. Base

2. Collector

3. Emitter

4. Collector (fin)

<R>

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

类似零件编号 - 2SA1615_15

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类似说明 - 2SA1615_15

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