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IRF1404 数据表(PDF) 1 Page - International Rectifier

部件名 IRF1404
功能描述  Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF1404 数据表(HTML) 1 Page - International Rectifier

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IRF1404
HEXFET® Power MOSFET
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
162
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
115
†
A
IDM
Pulsed Drain Current

650
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
519
mJ
IAR
Avalanche Current

95
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = 40V
RDS(on) = 0.004Ω
ID = 162A
†
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
10/20/00
www.irf.com
1
TO-220AB
PD -91896E


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