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2SK3307 数据表(PDF) 3 Page - Renesas Technology Corp |
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2SK3307 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14129EJ4V0DS00 (4th edition) Date Published November 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1999, 2000 DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 m Ω MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 m Ω MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 4650 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3307 TO-3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Drain Current (DC) ID(DC) ±70 A Drain Current (pulse) Note1 ID(pulse) ±280 A Total Power Dissipation (TC = 25 °C) PT1 120 W Total Power Dissipation (TA = 25 °C) PT2 3.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 45 A Single Avalanche Energy Note2 EAS 202 mJ Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.04 °C/W Channel to Ambient Rth(ch-A) 41.7 °C/W (TO-3P) |
类似零件编号 - 2SK3307_15 |
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类似说明 - 2SK3307_15 |
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