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3N166 数据表(PDF) 1 Page - Calogic, LLC

部件名 3N166
功能描述  Monolithic Dual P-Channel
Download  2 Pages
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制造商  CALOGIC [Calogic, LLC]
网页  http://www.calogic.net
标志 CALOGIC - Calogic, LLC

3N166 数据表(HTML) 1 Page - Calogic, LLC

  3N166 Datasheet HTML 1Page - Calogic, LLC 3N166 Datasheet HTML 2Page - Calogic, LLC  
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Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N165 / 3N166
FEATURES
•• Very High Impedance
•• High Gate Breakdown
•• Low Capacitance
ABSOLUTE MAXIMUM RATINGS (Note 1)
(TA = 25
oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . .
±125
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±80V
Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55
oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
oC. . . . . . . . . . . . . . . . . . 4.2mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
3N165-66
Hermetic TO-99
-55
oC to +150oC
X3N165-66
Sorted Chips in Carriers
-55
oC to +150oC
LLC
G1
D2
D1
G2
C
TO-99
S
2506
PIN CONFIGURATION
DEVICE SCHEMATIC
5
1
3
4
8
7
0190
ELECTRICAL CHARACTERISTICS (TA = 25
oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
IGSSR
Gate Reverse Leakage Current
10
pA
VGS = 40V
IGSSF
Gate Forward Leakage Current
-10
VGS = -40V
-25
TA = +125
oC
IDSS
Drain to Source Leakage Current
-200
VDS = -20V
ISDS
Source to Drain Leakage Current
-400
VSD = -20V, VDB = 0
ID(on)
On Drain Current
-5
-30
mA
VDS = -15V, VGS = -10V
VGS(th)
Gate Source Threshold Voltage
-2
-5
V
VDS = -15V, ID = -10
µA
VGS(th)
Gate Source Threshold Voltage
-2
-5
VDS = VGS, ID = -10
µA
rDS(on)
Drain Source ON Resistance
300
ohms
VGS = -20V, ID = -100
µA
BOTTOM VIEW
S
C
0180
D
2
G
2
G
1
D
1
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS018 REV A


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