N0801R_15 datasheet(3/5 Pages) RENESAS

部件名	N0801R

功能描述	PNP SILICON EPITAXIAL TRANSISTOR

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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3 / 5 page

N0801R

R07DS0728EJ0100

Rev.1.00

Page 3 of 5

Mar 30, 2012

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

−0.0001

−0.001

−0.01

−0.1

−1

−10

TA = 125˚C

25˚C

−25˚C

VBE - Base to Emitter Voltage - (V)

−0.0

−0.3

−0.6

−0.9

−1.2

VCE =

−2 V

Pulsed

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

10

100

1000

VCE =

−5 V

−1000

−100

−10

−1

IC - Collector Current - (mA)

OUTPUT CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

1

10

100

−100

−10

−1

−0.1

VCB - Collector to Base Voltage - (V)

IE = 0

f = 1.0 MHz

SWITCHING TIME vs.

COLLECTOR CURRENT

10

100

1000

IC - Collector Current - (mA)

−10

−100

−1000

−10000

VCE =

−10 V

IC = 10IB1 =

−10IB2

PW = 50

μs

ton

tf

tstg

类似零件编号 - N0801R_15

制造商	部件名	数据表	功能描述
Renesas Technology Corp	N0801R-T1-AT	85Kb / 5P	PNP SILICON EPITAXIAL TRANSISTOR

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